20 stern ave. springfield, new jersey 07081 u.s.a. 2sc1011/2SC2344 pnp/npn epitaxial planar silicon transistors high-voltage switching, af power amp, 100w output predriver application telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 maximum rating's at ta=25c collector-to-base voltage vcbc collector-to-emitter voltage ^'ceo emitter-to-base voltage collector current collector current (pulse) collector dissipation junction temperature storage temperaure vebo ic icp p t1 o c erf"" c tc-25 c. t) tstg electrical characteristics at ta = 25c collector cutoff current emitter cutoff current dc current gain gain-bandwidth product output capacitance base-to-emitter voltage c-e saturation voltage c-b breakdown .voltage c-e breakdown voltage e-b breakdown voltage turn-on time fall time storage time unit (-) 180 v (? ) 160 v (? ) 6 v (-) 1.5 a (-)3 a 25 w 150 c - 55. to -i- 150 "c min typ max unit ]cbo vcb=(-)120v, ie=0 (-)io pa 1ebo veb=(-)4v, ic=0 (-)io ua hfe vce=(-)5v,ic = (-) 160 v v(br)ebo ie~ (~)'ln>a, ic=0 (~) 6 v ton see specified test circuit. (0.29)0.15 /.< s tf lstg (0.19) 0.48 fl s (0.48)0.81 us ? the 2sa1011/2SC2344 are classified by 300ma hfe as follows : (50 li m> 100 e 200 mechanical data a -" ? v t1^ ) irt 1 ? ' "~s i*5-! rg il- 1- 1 1 t 1 stj l i 1 a / ( s iii l jt? ^ c ,11 1 . l 5__ . s^ ? r- dimensions mm inches min max min max i 10 104 0 393 0 409 3 15.2 15.9 0.598 0.626 3 12.7 13.7 0.500 0.539 3 6.2 6.6 0.244 0.260 e 4.4 4.6 0.173 0.181 ; 3.5 5.5 0.137 0.216 3 2.65 2.95 0.104 0.116 h 1 7.6 typ. 0.692 typ. 1.14 1.7 0.044 0.067 a 3.75 3.85 0.147 0.151 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information turnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-concluctors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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